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FDD7N20 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDD7N20 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page tm April 2007 ©2007 Fairchild Semiconductor Corporation FDD7N20 / FDU7N20 Rev. A www.fairchildsemi.com 1 UniFET TM FDD7N20 / FDU7N20 N-Channel MOSFET 200V, 5A, 0.69 Ω Features •RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A • Low gate charge( Typ. 5nC ) • Low Crss ( Typ. 5pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G S I-PAK FDU Series G D S G S D D-PAK FDD Series MOSFET Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 200 V VGSS Gate to Source Voltage ±30 V ID DrainCurrent -Continuous (TC = 25oC) 5 A -Continuous (TC = 100oC) 3 IDM Drain Current - Pulsed (Note 1) 15 A EAS Single Pulsed Avalanche Energy (Note 2) 62.5 mJ IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 4.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25oC) 43 W - Derate above 25oC0.34 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 2.9 oC/W RθJA Thermal Resistance, Junction to Ambient 110 |
Podobny numer części - FDD7N20 |
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Podobny opis - FDD7N20 |
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