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IRF3305PBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF3305PBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 10 page  8/24/04 www.irf.com 1 AUTOMOTIVE MOSFET PD - 95758 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 8.0mΩ ID = 75A S D G Description Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free Features TO-220AB IRF3305PbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case i ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient i ––– 62 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) 330 2.2 ± 20 Max. 140 99 560 75 860 470 See Fig.12a, 12b, 15, 16 Specifically designed for use in linear automotive applicationsthisHEXFETPowerMOSFETutilizes a rugged planar process technology and device design,whichgreatlyimprovestheSafeOperating Area(SOA)ofthedevice.Thesefeatures,coupled with 175°C junction operating temperature and low thermal resistance of 0.45C/W make the IRF3305 an ideal device for linear automotive applications. |
Podobny numer części - IRF3305PBF |
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Podobny opis - IRF3305PBF |
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