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TPCP8901 Datasheet(Arkusz danych) 5 Page - Toshiba Semiconductor

Numer części TPCP8901
Szczegółowy opis  TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
Pobierz  7 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
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TPCP8901
2006-11-13
5
PNP
0.1
0.01
1
100
10
0.1
1
10
0.001
1
1
10
10000
1000
100
0.01
0.1
Ta
= 100°C
−55°C
25°C
0.001
0.1
1
10
1
0.01
0.1
Ta
= −55°C
100°C
25°C
0.001
0.001
1
0.01
10
1
0.1
0.01
0.1
Ta
= 100°C
−55°C
25°C
0
0
0.6
1.0
1.2
0.8
1.0
−55°C
Ta
= 100°C
25°C
Collector
−emitter voltage −VCE
(V)
IC – VCE
Collector current
−IC (A)
hFE – IC
Collector current
−IC (A)
VCE (sat) – IC
Collector current
−IC (A)
VBE (sat) – IC
Base
−emitter saturation voltage −VBE (V)
IC – VBE
Collector
−emitter voltage −VCE (V)
Safe operation area
0
0
0.4
0.8
1.0
1.2
0.2
0.8
1.0
Common emitter
Ta
= 25°C
Single nonrepetitive pulse
−40
−30
−2
IB = −1 mA
−20
−10
−15
−5
0.6
0.4
0.6
0.2
Common emitter
VCE = −2 V
Single nonrepetitive pulse
Common emitter
β
= 30
Single nonrepetitive pulse
Common emitter
β
= 30
Single nonrepetitive pulse
Common emitter
VCE = −2 V
Single nonrepetitive pulse
1 ms※
10 ms※
IC max (Pulse) ※
DC operation
Ta = 25°C
IC max (Continuous)*
10 s※*
IC max (Pulse) ※
100 ms※*
−50
−100
0.2
0.4
0.6
0.8
0.2
0.4
*: Single nonrepetitive pulse
Ta
= 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
10 μs※
100 μs※




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