Features

l Compatible with 10 Gbps Miniature Device (XMD-MSA)

l High-speed response: 11.3 Gbps

l Low power supply voltage: Vcc=Vpd=3.3 V

l Differential output

l Sensitivity: +3 to -20.5 dBm

l High trans-impedance gain: 6 kΩ

l Low optical return loss: 35 dB Typ.

l Isolation type: Housing and signal ground are

electrically isolated.

l Flex board interface (G10342-54)

Applications

l SDH/SONET (STM-64/OC-192)

l 10 Gigabit Ethernet

l XFP transceiver

PHOTODIODE

InGaAs PIN photodiode with preamp

ROSA type, 1.3/1.55 µm, 10 Gbps

G10342-14/-54

1

s

s

s

Parameter

Symbol

Value

Unit

Supply voltage

Vcc

-0.5, +3.7

V

Reverse voltage (photodiode)

7

V

Storage temperature *

1

Tstg

-40 to +90

°C

s

s

s

Parameter

Symbol

Value

Unit

Case temperature *

1

Tc

-20 to 90

°C

Supply voltage

Vcc

3.05 to 3.53

V

Reverse voltage (photodiode)

Vpd

3.05 to 5.0

V

Spectral response range

λ

1.26 to 1.57

µm

Load resistance *

2

50

Ω

Bit rate

-

9 to 11.1

Gbps

Bit pattern

-

NRZ, Mark ratio=1/2

-

*1: No condensation

*2: Capacitive coupling

s Electrical and optical characteristics (recommended operating conditions, unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

λ=1.31 µm

0.75

0.85

-

Responsivity

R

λ=1.55 µm

0.8

0.9

-

A/W

Supply current

Icc

∞

-

32

45

mA

Cut-off frequency

fc

λ=1.55 µm, -3 dB

7.0

9.0

-

GHz

Low cut-off frequency

fc-L

λ=1.55 µm, -3 dB

-

10

50

kHz

Noise equivalent power *

3

NEP

Dark state, to 7.5 GHz

-

1.0

-

µWrms

Trans-impedance *

3

Tz

Ω, f=100 MHz

4

6

-

k

Ω

Minimum receivable sensitivity

Pmin

-

-20.5

-18.5

Maximum receivable sensitivity

Pmax

λ=1.55 µm,

PRBS=2

Extinction ratio=14 dB

+1

+3

-

dBm

Output amplitude

Vomax

Differential

300

450

650

mVpp

Tc=25 °C

-

0.05

0.5

Dark current

Dark state,

Vpd=3.3 V

-

-

100

nA

Optical return loss

ORL

λ=1.31/1.55 µm

27

35

-

dB

*3: Single-ended (Vout+) measurement