2SC5075_06 datasheet(2/5 Pages) TOSHIBA

Numer części	2SC5075

Szczegółowy opis	Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC5075

2006-11-10

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 400 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

1

mA

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0

500

―

V

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

400

―

V

VCE = 5 V, IC = 0.1 A

20

―

DC current gain

hFE

VCE = 5 V, IC = 1 A

8

―

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 0.2 A

―

1.0

V

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 0.2 A

―

1.5

V

Rise time

ton

―

1.0

Storage time

tstg

―

2.5

Switching time

Fall time

tf

IB1 = −IB2 = 0.08 A, duty cycle < 1%

―

1.0

μs

Marking

20 μs

VCC ≈ 200 V

Output

IB2

IB1

Input

C5075

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

Podobny numer części - 2SC5075_06

Producent	Numer części	Arkusz danych	Szczegółowy opis
Toshiba Semiconductor	2SC5075	203Kb / 3P	NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
Toshiba Semiconductor	2SC5075	1Mb / 73P	Bipolar Small-Signal Transistors

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Podobny opis - 2SC5075_06

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Toshiba Semiconductor	2SC5352	131Kb / 4P	Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications
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	2SC5208	167Kb / 5P	Silicon NPN Triple Diffused Type High-Voltage Switching Applications
	2SC3075	170Kb / 5P	Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching
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