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2SC5075 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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2SC5075 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC5075 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 400 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 500 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V VCE = 5 V, IC = 0.1 A 20 ― ― DC current gain hFE VCE = 5 V, IC = 1 A 8 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.2 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.2 A ― ― 1.5 V Rise time ton ― ― 1.0 Storage time tstg ― ― 2.5 Switching time Fall time tf IB1 = −IB2 = 0.08 A, duty cycle < 1% ― ― 1.0 μs Marking 20 μs VCC ≈ 200 V Output IB2 IB1 Input C5075 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Podobny numer części - 2SC5075_06 |
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Podobny opis - 2SC5075_06 |
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