2SK882 datasheet(1/6 Pages) TOSHIBA

Numer części	2SK882

Szczegółowy opis	Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications

Download	6 Pages

Scroll/Zoom	100%

Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

Logo

1 / 6 page

2SK882

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK882

FM Tuner, VHF RF Amplifier Applications

• Low reverse transfer capacitance: Crss = 0.025 pF (typ.)

• Low noise figure: NF = 1.7dB (typ.)

• High power gain: Gps = 28dB (typ.)

• Recommend operation voltage: 5~15 V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDS

20

V

Gate-source voltage

VGS

±5

V

Drain current

ID

30

mA

Drain power dissipation

PD

100

mW

Channel temperature

Tch

125

°C

Storage temperature

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VDS = 0, VGS = ±5 V

⎯

±50

nA

Drain-source voltage

VDSX

VGS = −4 V, ID = 100 μA

20

⎯

V

Drain current

IDSS

(Note)

VDS = 10 V, VGS = 0

3

⎯

14

mA

Gate-source cut-off voltage

VGS (OFF)

VDS = 10 V, ID = 100 μA

⎯

−2.5

V

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, VGS = 0, f = 1 kHz

⎯

10

⎯

mS

Input capacitance

Ciss

⎯

3.0

4.3

pF

Reverse transfer capacitance

Crss

VDS = 10 V, VGS = 0, f = 1 MHz

⎯

0.025

0.04

pF

Power gain

Gps

20

28

⎯

dB

Noise figure

NF

VDS = 10 V, f = 100 MHz (Figure 1)

⎯

1.7

3.0

dB

Note: IDSS classification Y: 3.0~7.0 mA, GR: 6.0~14.0 mA

Unit: mm

JEDEC

―

JEITA

SC-70

TOSHIBA

2-2E1C

Weight: 0.006 g (typ.)

Podobny numer części - 2SK882

Producent	Numer części	Arkusz danych	Szczegółowy opis
Toshiba Semiconductor	2SK882	199Kb / 4P	N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

More results

Podobny opis - 2SK882

Producent	Numer części	Arkusz danych	Szczegółowy opis
Toshiba Semiconductor	2SK302	864Kb / 7P	Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications
	2SK882	199Kb / 4P	N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
	2SK1771	584Kb / 6P	N-CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
	2SK1771	190Kb / 5P	N-CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
	2SK302	252Kb / 6P	N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
	3SK195	223Kb / 4P	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER ,FM TUNER APPLICATIONS)
	3SK226	214Kb / 4P	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER , FM TUNER APPLICATIONS)
	3SK258	215Kb / 4P	N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS)
	2SK241	262Kb / 5P	N CHANNEL MOS TYPE (FM TUNER, VHF AND FR AMPLIFIER APPLICATIONS)
	2SK302-Y	377Kb / 7P	FM Tuner, VHF RF Amplifier Applications

More results

2SK882 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

2SK882 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

Podobny numer części - 2SK882

Podobny opis - 2SK882

Html Pages

1 2 3 4 5 6

Arkusz danych Pobierz

Link URL