Zakładka z wyszukiwarką danych komponentów |
|
2SJ619 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
|
2SJ619 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ619 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) • Enhancement model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −100 V Drain-gate voltage (RGS = 20 kΩ) VDGR −100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −16 Drain current Pulse (Note 1) IDP −64 A Drain power dissipation (Tc = 25°C) PD 75 W Single pulse avalanche energy (Note 2) EAS 292 mJ Avalanche current IAR −16 A Repetitive avalanche energy (Note 3) EAR 7.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.67 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = −16 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) 1 3 4 |
Podobny numer części - 2SJ619_06 |
|
Podobny opis - 2SJ619_06 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |