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2SK3176 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SK3176
Szczegółowy opis  Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3176 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SK3176
2007-03-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 200 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 15 A
38
52
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 15 A
15
30
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
5400
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
580
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1900
pF
Rise time
tr
15
Turn-on time
ton
55
Fall time
tf
25
Switching time
Turn-off time
toff
190
ns
Total gate charge
(gate-source plus gate-drain)
Qg
VDD ∼− 160 V, VGS = 10 V, ID = 30 A
125
nC
Gate-source charge
Qgs
VDD ∼− 160 V, VGS = 10 V, ID = 30 A
80
nC
Gate-drain (“miller”) charge
Qgd
VDD ∼− 160 V, VGS = 10 V, ID = 30 A
45
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
30
A
Pulse drain reverse current
(Note 1)
IDRP
90
A
Forward voltage (diode)
VDSF
IDR = 30 A, VGS = 0 V
−2.0
V
Reverse recovery time
trr
IDR = 30 A, VGS = 0 V,
dIDR/dt = 100 A/μs
270
ns
Reverse recovery charge
Qrr
IDR = 30 A, VGS = 0 V,
dIDR/dt = 100 A/μs
3.0
μC
Marking
K3176
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Product No. (or abbreviation code)
0 V
10 V
VGS
VDD ∼− 100 V
ID = 15 A
VOUT
Duty
≤ 1%, tw = 10 μs


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