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TLP833 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLP833 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TLP833(F) 2007-10-01 3 Precautions 1. Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. 2. The package is made of polybutylene −terephthalate. Oil or chemicals may cause the package to melt or crack. Care must be taken in relation to the environment in which the device is to be installed. 3. Mount the device on a level surface. 4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1 : 1. (0) P (t) P (0) /I I (t) /I I O O F C F C = |
Podobny numer części - TLP833_07 |
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Podobny opis - TLP833_07 |
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