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TLP833F Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TLP833F Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page TLP833(F) 2007-10-01 2 Markings Operating Ranges Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― ― 25 mA Operating temperature Topr −10 ― 75 °C Optical Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10mA 1.00 1.15 1.30 V Reverse current IR VR = 5V ― ― 10 μA Peak emission wavelength λP IF = 10mA ― 940 ― nm Dark current ID (ICEO) VCE = 24V, IF = 0 ― ― 0.1 μA Peak sensitivity wavelength λP ― ― 870 ― nm Current transfer ratio IC/IF VCE = 2V, IF = 10mA 5 ― 100 % Collector −emitter saturation voltage VCE (sat) IF = 20mA, IC = 0.5mA ― 0.1 0.35 V Rise time tr ― 15 ― Fall time tf VCC = 5V, IC = 1mA RL = 1kΩ (Note) ― 15 ― μs (Note): Switching time measurement circuit and waveform Monthly lot number Year of manufacture (last digit of year of manufacture) Month of manufacture (January to December denoted by letters A to L respectively) VOUT VCC IF RL 90% 10% VOUT tf ts IF td tr |
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