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TLP832F Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLP832F Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 10 page TLP832(F) 2007-10-01 3 Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10mA 1.00 1.15 1.30 V Reverse current IR VR = 5V ― ― 10 μA Peak emission wavelength λP IF = 10mA ― 940 ― nm Dark current ID (ICEO) VCE = 24V, IF = 0 ― ― 0.1 μA Peak sensitivity wavelength λP ― 870 ― nm Current transfer ratio IC / IF VCE = 2V, IF = 10mA 5 ― 100 % Collector −emitter saturation voltage VCE (sat) IF = 20mA, IC = 0.5mA ― 0.1 0.35 V Rise time tr ― 15 50 Fall time tf VCC = 5V, IC = 1mA, RL = 1kΩ (Note 2) ― 15 50 μs (Note 2): Switching time measurement circuit and waveform Precautions 1. When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the phototransistor may adversely affect the optical characteristics of the device and may drastically reduce the conversion efficiency. 2. Care must taken in relation to the environment in which the device is to be installed. Oil or chemicals may cause the package to melt or crack. 3. Mount the device on a level surface. 4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. IF VCC VOUT RL IF VOUT td tr ts tf 10% 90% (0) O P (t) O P (0) F I / C I (t) F I / C I = |
Podobny numer części - TLP832F |
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Podobny opis - TLP832F |
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