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TLP830 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TLP830 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TLP830(F) 2007-10-01 2 Product Indication Monthly production lot Production month (Jan.-Dec. are indicated by alphabetes of A-L) Production year (last digit of a.d. is indicated) Operating Ranges Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― ― 25 mA Operating temperature Topr −10 ― 75 °C Opto Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.00 1.15 1.30 V Reverse current IR VR = 5 V ― ― 10 μA Peak emission wavelength λP IF = 10 mA ― 940 ― nm Dark current ID VCE = 24 V, IF = 0 ― ― 0.1 μA Peak sensitivity wavelength λP ― 870 ― nm Current transfer ratio IC/IF VCE = 2 V, IF = 10 mA 3 ― 20 % Collector −emitter saturation voltage VCE (sat) IF = 20 mA, IC = 0.3 mA ― 0.1 0.35 V Rise time tr ― 15 ― Fall time tf VCC = 5 V, IC = 1 mA RL = 1 kΩ ― 15 ― Response time (1) t1 ― ― 80 Switching times Response time (2) t2 VCC = 4.4 V, IC = 13 mA RL = 47 kΩ (Note) ― ― 800 μs Note: t1, t2 test condition VOUT IF 2.5V 0.8V t1 t2 RL=47kΩ IF=13mA VOUT VCC=4.4V |
Podobny numer części - TLP830_07 |
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Podobny opis - TLP830_07 |
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