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TLP830 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLP830 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TLP830(F) 2007-10-01 3 Precaution 1. If the chemical are used for cleaning, the soldered surface only shall be cleaned with chemicals avoiding the whole cleaning of the package. 2. The container is made of polybutylene terephthalate. Oil or chemicals may cause melting or cracks. Check the environment carefully before installing. 3. Shall be mounted on an unwarped surface. 4. A visible light cut −off type photo transistor which blocks light with frequencies of 700nm or above is used. However, the device cannot block ambient light with a wavelength of 700nm or more or sunlight. Install avoiding the disturbance light. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1: 1. (0) O P (t) O P (0) F I / C I (t) F I / C I = |
Podobny numer części - TLP830 |
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Podobny opis - TLP830 |
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