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TLP759F Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części TLP759F
Szczegółowy opis  GaA?밃s Ired Photo−IC
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP759F Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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TLP759F
2007-10-01
1
TOSHIBA Photocoupler GaAℓAs Ired + Photo−IC
TLP759F
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Transistor Inverter
The TOSHIBA TLP759F consists of a GaAℓAs high-output light
emitting diode and a high speed detector of one chip photo diode-
transistor. This unit is 8-lead DIP package.
TLP759F has no internal base connection, and a faraday shield
integrated on the photodetector chip provides an effective common
mode noise transient immunity.
So this is suitable for application in noisy environmental condition.
All parameters are tested to the specification of TLP759.
• Isolation voltage: 5000 Vrms (min.)
• Switching speed: tpHL = 0.3μs (typ.)
tpHL = 0.5μs (typ.) (RL = 1.9 kΩ)
• TTL compatible
• UL recognized: UL1577, file no. E67349
• BSI approved:
BS EN60065:2002, certificate no.8869
BS EN60950-1:2002, certificate no.8870
• Option (D4) type
VDE approved: DIN EN 60747-5-2
Certificate no. 40009302
Maximum operating insulation: 1140VPK
Highest permissible over voltage: 6000VPK
(Note) When an EN 60747-5-2 approved type is
needed, please designate the “ Option (D4) ”
• Creepage distance: 8.0mm
Clearance: 8.0mm
Insulation thickness: 0.4mm
Pin Configuration(top view)
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: Emitter(GND)
6: Collector(output)
7: N.C.
8: VCC
7
8
6
2
1
3
4
5
SHIELD
Schematic
8
6
2
3
VO
5
SHIELD
GND
VCC
IO
ICC
VF
IF
Unit in mm
TOSHIBA
11−10C402
Weight: 0.54g


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