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TLP747G Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części TLP747G
Szczegółowy opis  GaAs Ired & Photo−Thyristor
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP747G Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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TLP747G
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
60
mA
Forward current derating (Ta ≥ 39°C)
ΔIF / °C
−0.7
mA / °C
Peak forward current (100μs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Peak forward voltage (RGK = 27kΩ)
VDRM
400
V
Peak reverse voltage (RGK = 27kΩ)
VRRM
400
V
On
−state current
IT(RMS)
150
mA
On
−state current derating (Ta ≥ 25°C)
ΔIT / °C
−2.0
mA / °C
Peak on
−state current (100 μs pulse, 120pps)
ITP
3
A
Peak one cycle surge current
ITSM
2
A
Peak reverse gate voltage
VGM
5
V
Power dissipation
PD
150
mW
Power dissipation derating (Ta ≥ 25°C)
ΔPD / °C
−2.0
mW / °C
Junction temperature
Tj
100
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−40~100
°C
Lead soldering temperature (10s)
Tsol
260
°C
Total package power dissipation
PT
250
mW
Total package power dissipation derating (Ta ≥ 25°C)
ΔPT / °C
−3.3
mW / °C
Isolation voltage (AC, 1min., R.H. ≤ 60%)
(Note)
BVS
4000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note)
Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
120
Vac
Forward current
IF
20
25
mA
Operating temperature
Topr
−25
85
°C
Gate to cathode resistance
RGK
27
33
kΩ
Gate to cathode capacity
CGK
0.01
0.1
μF
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.


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