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TLP701 Arkusz danych(PDF) 4 Page - Toshiba Semiconductor

Numer części TLP701
Szczegółowy opis  IGBT/Power MOS FET gate drive
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP701 Arkusz danych(HTML) 4 Page - Toshiba Semiconductor

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TLP701
2007-10-01
4
Switching Characteristics (Ta = −40 to 100 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.*
Max
Unit
L
→ H
tpLH
IF = 0 → 5 mA
100
700
Propagation delay time
H
→ L
tpHL
IF = 5 → 0 mA
100
700
Output rise time (10
−90 %)
tr
IF = 0 → 5 mA
50
Output fall time (90
−10 %)
tf
IF = 5 → 0 mA
50
Switching time dispersion
between ON and OFF
| tpHL-tpLH |
7
VCC = 30 V
Rg = 47 Ω
Cg = 3 nF
IF = 0 , 5 mA
−500
500
ns
Common mode transient immunity
at HIGH level output
CMH
IF = 5 mA
VO (min) = 26 V
−10000
Common mode transient immunity
at LOW level output
CML
8
VCM =1000 Vp-p
VCC = 30 V
Ta
= 25 °C
IF = 0 mA
VO (max) = 1 V
10000
V/
μs
( * ): All typical values are at Ta
= 25 °C.
Test Circuit 1: IOPH
Test Circuit 2: IOPL
Test Circuit 3: VOH
Test Circuit 4: VOL
Test Circuit 5: ICCH
Test Circuit 6: ICCL
A
IOPL
V5-4
VCC
1
3
4
6
0.1
μF
A
IF
1
3
4
6
IOPH
V6-5
VCC
0.1
μF
V
VCC
VOH
IF
1
3
4
6
IO
0.1
μF
VOL
VCC
V
VF
1
3
4
6
IO
0.1
μF
VCC
A
ICCH
IF
1
3
4
6
0.1
μF
VCC
A
ICCL
1
3
4
6
0.1
μF


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