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TLP701 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

Numer części TLP701
Szczegółowy opis  IGBT/Power MOS FET gate drive
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP701 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

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TLP701
2007-10-01
3
Electrical Characteristics (Ta = −40 to 100 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.*
Max
Unit
Forward voltage
VF
IF = 5 mA, Ta = 25 °C
1.55
1.70
V
Temperature coefficient of forward
voltage
∆VF/∆Ta
IF = 5 mA
−2.0
mV/°C
Input reverse current
IR
VR = 5 V, Ta = 25 °C
10
μA
Input capacitance
CT
V
=0 V, f = 1 MHz, Ta = 25 °C
45
pF
IOPH1
V6-5 = 4 V
−0.2
−0.38
“H” Level
IOPH2
1
VCC = 15 V
IF = 5 mA
V6-5 = 10 V
−0.4
−0.60
IOPL1
V5-4 = 2 V
0.2
0.36
Output current
(Note 8)
“L” Level
IOPL2
2
VCC = 15 V
IF = 0 mA
V5-4 = 10 V
0.4
0.62
A
“H” Level
VOH
3
IO = −100 mA,
IF = 5 mA
6.0
8.5
Output voltage
“L” Level
VOL
4
VCC = 10 V
IO = 100 mA,
VF = 0.8 V
0.4
1.0
V
“H” Level
ICCH
5
IF = 10 mA
1.4
2.0
Supply current
“L” Level
ICCL
6
VCC = 10 to 30 V
VO=Open
IF = 0 mA
1.3
2.0
mA
Threshold input current
L
→ H
IFLH
VCC = 15 V, VO > 1 V
2.5
5
mA
Threshold input voltage
H
→ L
VFHL
VCC = 15 V, VO < 1 V
0.8
V
Supply voltage
VCC
10
30
V
( * ): All typical values are at Ta
= 25°C
Note 8: Duration of Io time ≤ 50
μs, 1 pulse
Note 9: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design.
It is therefore all the more necessary to observe general precautions regarding ESD when handling this
component.
Isolation Characteristics (Ta = 25 °C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
CS
V = 0 V , f = 1MHz
(Note 5)
1.0
pF
Isolation resistance
RS
R.H. ≤ 60 %, VS = 500 V
(Note 5)
1×10
12
10
14
AC, 1 minute
5000
AC, 1 second, in oil
10000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
10000
Vdc


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