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TLP632 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLP632 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TLP631,TLP632 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector −emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 ― ― V Emitter −collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V Collector −base breakdown voltage (TLP631) V(BR) CBO IC = 0.1 mA 80 ― ― V Emitter −base breakdown voltage (TLP631) V(BR) EBO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 100 nA Collector dark current ICEO VCE = 24 V, Ta = 85°C ― 2 50 μA Capacitance collector to emitter CCE V = 0, f = 1 MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 50 ― 600 Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V Rank GB 100 ― 600 % ― 60 ― Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB 30 ― ― % Collector −emitter saturation voltage VCE (sat) IC = 2.4 mA, IF = 8 mA ― ― 0.4 V |
Podobny numer części - TLP632 |
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Podobny opis - TLP632 |
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