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TLPGE50T Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TLPGE50T Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 12 page TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRE50T(F) 50 4 120 TLRME50T(F) 50 4 120 TLSE50T(F) 50 4 120 TLOE50T(F) 50 4 120 TLYE50T(F) 50 4 120 TLPYE50T(F) 50 4 120 TLGE50T(F) 50 4 120 TLFGE50T(F) 50 4 120 TLPGE50T(F) 50 4 120 −40~100 −40~120 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLRE50T(F) 630 (644) 20 20 850 1800 20 1.9 2.4 20 50 4 TLRME50T(F) 626 (636) 23 20 850 2200 20 1.9 2.4 20 50 4 TLSE50T(F) 613 (623) 20 20 1530 3500 20 1.9 2.4 20 50 4 TLOE50T(F) 605 (612) 20 20 1530 4500 20 2.0 2.4 20 50 4 TLYE50T(F) 587 (590) 17 20 1530 3500 20 2.0 2.4 20 50 4 TLPYE50T(F) 580 (583) 14 20 850 2500 20 2.0 2.4 20 50 4 TLGE50T(F) 571 (574) 17 20 476 1500 20 2.0 2.4 20 50 4 TLFGE50T(F) 565 (568) 15 20 272 1000 20 2.0 2.4 20 50 4 TLPGE50T(F) 558 (562) 14 20 153 600 20 2.1 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
Podobny numer części - TLPGE50T |
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Podobny opis - TLPGE50T |
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