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TLPGE1100B Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TLPGE1100B Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 15 page TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 2 Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Please see Note 1 Reverse Voltage VR (V) Power Dissipation PD (mW) Operation Temperature Topr (°C) Storage Temperature Tstg (°C) TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B 50 4 120 −40~100 −40~100 Note 1: Forward current derating Electrical Characteristics (Ta = 25°C) Forward Voltage VF Reverse Current IR Product Name Min Typ. Max IF Max VR TLRE1100B 1.6 1.9 2.4 TLSE1100B 1.6 1.9 2.4 TLOE1100B 1.6 2.0 2.4 TLYE1100B 1.6 2.0 2.4 TLGE1100B 1.6 2.0 2.4 TLFGE1100B 1.6 2.0 2.4 TLPGE1100B 1.6 2.1 2.4 20 10 4 Unit V mA μA V 0 80 60 0 100 80 120 40 20 40 20 60 Ambient temperature Ta (°C) ) IF – Ta |
Podobny numer części - TLPGE1100B |
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Podobny opis - TLPGE1100B |
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