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TLPGE1100B Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

Numer części TLPGE1100B
Szczegółowy opis  Panel Circuit Indicator
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLPGE1100B Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

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TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11)
2006-05-31
3
Optical Characteristics–1 (Ta = 25°C)
Luminous Intensity IV
Product Name
Min
Typ.
Max
IF
Available Iv rank
Please see Note 2
TLRE1100B
40
100
320
20
PA / QA / RA / SA
TLSE1100B
63
180
500
20
QA / RA / SA / TA
TLOE1100B
63
150
500
20
QA / RA / SA / TA
TLYE1100B
63
150
500
20
QA / RA / SA / TA
TLGE1100B
40
100
320
20
PA / QA / RA / SA
TLFGE1100B
25
45
125
20
NA / PA / QA
TLPGE1100B
10
25
50
20
LA / MA / NA
Unit
mcd
mcd
mcd
mA
Note 2: The specification on the above table is used for Iv classification of LEDs in Toshiba facility.
Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned.
Luminous Intensity IV
Rank
Min
Max
LA
10
20
MA
16
32
NA
25
50
PA
40
80
QA
63
125
RA
100
200
SA
160
320
TA
250
500
Unit
mcd
mcd
Optical Characteristics–2 (Ta = 25°C)
Emission Spectrum
Peak Emission
Wavelength
λp
Δλ
Dominant Wavelength
λd
Product Name
Min
Typ.
Max
Typ.
Min
Typ.
Max
IF
TLRE1100B
644
18
624
630
638
TLSE1100B
623
15
607
613
621
TLOE1100B
612
15
599
605
613
TLYE1100B
590
15
581
587
595
TLGE1100B
574
13
565
571
576
TLFGE1100B
568
11
561
565
569
TLPGE1100B
562
11
555
558
564
20
Unit
nm
nm
nm
mA
The cautions
• This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by the IR light.
• This product is designed as a general display light source usage, and it has applied the measurement standard
that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional
application (ex. Light source for sensor, optical communication and etc) except general display light source.


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