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TLPGE1100B Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLPGE1100B Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 15 page TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 3 Optical Characteristics–1 (Ta = 25°C) Luminous Intensity IV Product Name Min Typ. Max IF Available Iv rank Please see Note 2 TLRE1100B 40 100 320 20 PA / QA / RA / SA TLSE1100B 63 180 500 20 QA / RA / SA / TA TLOE1100B 63 150 500 20 QA / RA / SA / TA TLYE1100B 63 150 500 20 QA / RA / SA / TA TLGE1100B 40 100 320 20 PA / QA / RA / SA TLFGE1100B 25 45 125 20 NA / PA / QA TLPGE1100B 10 25 50 20 LA / MA / NA Unit mcd mcd mcd mA Note 2: The specification on the above table is used for Iv classification of LEDs in Toshiba facility. Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned. Luminous Intensity IV Rank Min Max LA 10 20 MA 16 32 NA 25 50 PA 40 80 QA 63 125 RA 100 200 SA 160 320 TA 250 500 Unit mcd mcd Optical Characteristics–2 (Ta = 25°C) Emission Spectrum Peak Emission Wavelength λp Δλ Dominant Wavelength λd Product Name Min Typ. Max Typ. Min Typ. Max IF TLRE1100B ⎯ 644 ⎯ 18 624 630 638 TLSE1100B ⎯ 623 ⎯ 15 607 613 621 TLOE1100B ⎯ 612 ⎯ 15 599 605 613 TLYE1100B ⎯ 590 ⎯ 15 581 587 595 TLGE1100B ⎯ 574 ⎯ 13 565 571 576 TLFGE1100B ⎯ 568 ⎯ 11 561 565 569 TLPGE1100B ⎯ 562 ⎯ 11 555 558 564 20 Unit nm nm nm mA The cautions • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by the IR light. • This product is designed as a general display light source usage, and it has applied the measurement standard that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional application (ex. Light source for sensor, optical communication and etc) except general display light source. |
Podobny numer części - TLPGE1100B |
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Podobny opis - TLPGE1100B |
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