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TLPGE50TF Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części TLPGE50TF
Szczegółowy opis  Panel Circuit Indicators
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLPGE50TF Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Product Name
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
TLRE50T(F)
50
4
120
TLRME50T(F)
50
4
120
TLSE50T(F)
50
4
120
TLOE50T(F)
50
4
120
TLYE50T(F)
50
4
120
TLPYE50T(F)
50
4
120
TLGE50T(F)
50
4
120
TLFGE50T(F)
50
4
120
TLPGE50T(F)
50
4
120
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical and Optical Characteristics (Ta = 25°C)
Typ. Emission Wavelength
Luminous Intensity
IV
Forward Voltage
VF
Reverse Current
IR
Product Name
λd
λP
Δλ
IF
Min
Typ.
IF
Typ.
Max
IF
Max
VR
TLRE50T(F)
630
(644)
20
20
850
1800
20
1.9
2.4
20
50
4
TLRME50T(F)
626
(636)
23
20
850
2200
20
1.9
2.4
20
50
4
TLSE50T(F)
613
(623)
20
20
1530
3500
20
1.9
2.4
20
50
4
TLOE50T(F)
605
(612)
20
20
1530
4500
20
2.0
2.4
20
50
4
TLYE50T(F)
587
(590)
17
20
1530
3500
20
2.0
2.4
20
50
4
TLPYE50T(F)
580
(583)
14
20
850
2500
20
2.0
2.4
20
50
4
TLGE50T(F)
571
(574)
17
20
476
1500
20
2.0
2.4
20
50
4
TLFGE50T(F)
565
(568)
15
20
272
1000
20
2.0
2.4
20
50
4
TLPGE50T(F)
558
(562)
14
20
153
600
20
2.1
2.4
20
50
4
Unit
nm
mA
mcd
mA
V
mA
μA
V
Precautions
Please be careful of the following:
• Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.


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