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74V1T125CTR Arkusz danych(PDF) 3 Page - STMicroelectronics |
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74V1T125CTR Arkusz danych(HTML) 3 Page - STMicroelectronics |
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3 / 8 page  DC SPECIFICATIONS Symb ol Parameter T est Cond ition s Val ue Un it VCC (V) TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. VIH High Level Input Voltage 4.5 to 5.5 2 2 V VIL Low Level Input Voltage 4.5 to 5.5 0.8 0.8 V VOH High Level Output Voltage 4.5 IO=-50 µA 4.4 4.5 4.4 V 4.5 IO=-8 mA 3.94 3.8 VOL Low Level Output Voltage 4.5 IO=50 µA 0.0 0.1 0.1 V 4.5 IO=8 mA 0.36 0.44 IOZ High Impedance Output Leakage Current 5.5 VI =VIH or VIL VO =VCC or GND ±0.25 ±2.5 µA II Input Leakage Current 0 to 5.5 VI = 5.5V or GND ±0.1 ±1.0 µA ICC Quiescent Supply Current 5.5 VI =VCC or GND 1 10 µA ∆ICC Additional Worst Case Supply Current 5.5 One Input at 3.4V, other input at VCC or GND 1.35 1.5 mA IOPD Output Leakage Current 0VOUT = 5.5V 0 0.5 5.0 µA CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Val ue Un it TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. CIN Input Capacitance 4 10 10 pF COUT Output Capacitance 10 pF CPD Power Dissipation Capacitance (note 1) 14 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN +ICC AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3 ns) Symb ol Parameter Test Co nditi on Val ue Un it VCC (*) (V) CL (pF ) TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. tPLH tPHL Propagation Delay Time 5.0 15 3.8 5.5 1.0 6.5 ns 5.0 50 5.3 7.5 1.0 8.5 tPLZ tPHZ Output Disable Time 5.0 15 3.6 5.1 1.0 6.0 ns 5.0 50 5.1 7.1 1.0 8.0 tPZH tPZL Output Enable Time 5.0 50 6.1 8.8 1.0 10.0 ns (*) Voltage range is 5V ± 0.5V 74V1T125 3/8 |
Podobny numer części - 74V1T125CTR |
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Podobny opis - 74V1T125CTR |
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