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BUZ72A Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części BUZ72A
Szczegółowy opis  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUZ72A Arkusz danych(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
ISD M
Source-drain Current
Source-drain Current
(pulsed)
11
44
A
A
VSD (
∗)
Forward On Volt age
ISD =22 A
VGS =0
1.6
V
trr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 11 A
di/dt = 100 A/
µs
VDD =20 V
Tj =150
oC
80
0.22
ns
µC
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
Derating Curve
Output Characteristics
BUZ72A
3/7


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