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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AD549KH Arkusz danych(PDF) 11 Page - Analog Devices |
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AD549KH Arkusz danych(HTML) 11 Page - Analog Devices |
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11 / 20 page  AD549 Rev. H | Page 11 of 20 The case of the AD549 is connected to Pin 8 so that it can be bootstrapped near the input potential. This minimizes pin leakage and input common-mode capacitance due to the case. Guard schemes for inverting and noninverting amplifier topologies are illustrated in Figure 28 and Figure 29. 2 3 6 8 AD549 + VOUT – IN CF RF GUARD Figure 28. Inverting Amplifier with Guard 3 2 6 8 AD549 + VOUT – VS + – GUARD RF RI Figure 29. Noninverting Amplifier with Guard Other guidelines include keeping the circuit layout as compact as possible and keeping the input lines short. Keeping the assembly rigid and minimizing sources of vibration reduces triboelectric and piezoelectric effects. All precision, high impedance circuitry requires shielding against interference noise. Use low noise coaxial or triaxial cables for remote connections to the input signal lines. OFFSET NULLING The AD549 input offset voltage can be nulled by using balance Pin 1 and Pin 5, as shown in Figure 30. Nulling the input offset voltage in this fashion introduces an added input offset voltage drift component of 2.4 μV/°C per mV of nulled offset (a maxi- mum additional drift of 0.6 μV/°C for the AD549K, 1.2 μV/°C for the AD549L, and 2.4 μV/°C for the AD549J). 2 3 6 5 1 7 4 AD549 + VOUT – –VS +VS 10kΩ Figure 30. Standard Offset Null Circuit The approach in Figure 31 can be used when the amplifier is used as an inverter. This method introduces a small voltage referenced to the power supplies in series with the positive input terminal of the amplifier. The amplifier input offset voltage drift with temperature is not affected. However, variation of the power supply voltages causes offset shifts. 2 3 6 AD549 + VOUT – VI + – RF RI 200Ω 100kΩ 499kΩ 499kΩ 0.1µF –VS +VS Figure 31. Alternate Offset Null Circuit for Inverter Table 3. Insulating Materials and Characteristics Material Volume Resistivity (V to CM) Minimal Triboelectric Effect1 Minimal Piezoelectric Effect1 Resistance to Water Absorption1 Teflon 1017 to 1018 W W G Kel-F® 1017 to 1018 W M G Sapphire 1016 to 1018 M G G Polyethylene 1014 to 1018 M G M Polystyrene 1012 to 1018 W M M Ceramic 1012 to 1014 W M W Glass Epoxy 1010 to 1017 W M W PVC 1010 to 1015 G M G Phenolic 105 to 1012 W G W 1 G: good with regard to property; M: moderate with regard to property; W: weak with regard to property. |
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Podobny opis - AD549KH |
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