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P-TO263-3-2 Arkusz danych(PDF) 6 Page - Infineon Technologies AG |
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P-TO263-3-2 Arkusz danych(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page 2003-10-06 Page 6 SPP03N60S5 SPB03N60S5 Final data 5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0 1 2 3 4 5 6 Ω 8 SPP03N60S5 typ 98% 6 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 V 20 VGS 0 1 2 3 4 5 6 A 8 7 Typ. gate charge VGS = f (QGate) parameter: ID = 3.2 A pulsed 0 2 4 6 8 10 12 14 16 nC 19 QGate 0 2 4 6 8 10 12 V 16 SPP03N60S5 0.2 V DS max 0.8 V DS max 8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -2 10 -1 10 0 10 1 10 A SPP03N60S5 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
Podobny numer części - P-TO263-3-2 |
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Podobny opis - P-TO263-3-2 |
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