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SI1012R Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części SI1012R
Szczegółowy opis  N-Channel 1.8-V (G-S) MOSFET
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1012R Arkusz danych(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 10 ns
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
Pb-free
Available
Si1012R/X
Vishay Siliconix
Document Number: 71166
S-50366—Rev. B, 28-Feb-05
www.vishay.com
1
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (mA)
0.70 @ VGS = 4.5 V
600
20
0.85 @ VGS = 2.5 V
500
1.25 @ VGS = 1.8 V
350
Top View
2
1
S
D
G
3
SC-75A or SC-89
ORDERING INFORMATION
Part Number
Package
Marking
Code
Si1012R-T1
Si1012R-T1—E3 (Lead (Pb)-Free)
SC−75A
(SOT-416)
C
Si1012X-T1
Si1012X-T1—E3 (Lead (Pb)-Free)
SC-89
(SOT-490)
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
"6
V
Continuous Drain Current (TJ = 150_C)b
TA = 25_C
ID
600
500
Continuous Drain Current (TJ = 150_C)b
TA = 85_C
ID
400
350
mA
Pulsed Drain Currenta
IDM
1000
mA
Continuous Source Current (diode conduction)b
IS
275
250
Maximum Power Dissipationb for SC 75
TA = 25_C
175
150
Maximum Power Dissipationb for SC-75
TA = 85_C
PD
90
80
mW
Maximum Power Dissipationb for SC 89
TA = 25_C
PD
275
250
mW
Maximum Power Dissipationb for SC-89
TA = 85_C
160
140
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
d.
Pulse width limited by maximum junction temperature.
e.
Surface Mounted on FR4 Board.


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