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M40Z300WSH Arkusz danych(PDF) 10 Page - STMicroelectronics

Numer części M40Z300WSH
Szczegółowy opis  NVRAM CONTROLLER for up to EIGHT LPSRAM
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M40Z300WSH Arkusz danych(HTML) 10 Page - STMicroelectronics

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VCC NOISE AND NEGATIVE GOING TRANSIENTS
ICC transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur.
A ceramic bypass capacitor value of 0.1µF (as
shown in figure 8) is recommended in order to pro-
vide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, STMicroelectronics recom-
mends connecting a schottky diode from VCC to
VSS (cathode connected to VCC, anode to VSS).
Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount.
Figure 7. Address-Decode Time
Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay
between E and EXCON
AI02551
A, B
E
E1CON-E4CON
tAS
tEDH or tEDL
tEDL
Figure 8. Supply Voltage Protection
AI00622
VCC
0.1
µF
DEVICE
VCC
VSS
Table 8. Battery Table
Part Number
Description
Package
M4Z28-BR00SH
Lithium Battery (48mAh) SNAPHAT
SH
M4Z32-BR00SH
Lithium Battery (120mAh) SNAPHAT
SH


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