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STYN208 Arkusz danych(PDF) 1 Page - Sirectifier Semiconductors

Numer części STYN208
Szczegółowy opis  Discrete Thyristors(SCRs)
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Producent  SIRECTIFIER [Sirectifier Semiconductors]
Strona internetowa  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

STYN208 Arkusz danych(HTML) 1 Page - Sirectifier Semiconductors

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STYN208(S) thru STYN1008(S)
Discrete Thyristors(SCRs)
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min.
Max.
12.70
13.97
14.73
16.00
9.91
10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500
0.550
0.580
0.630
0.390
0.420
0.139
0.161
0.230
0.270
0.100
0.125
0.045
0.065
0.110
0.230
0.025
0.040
0.100
BSC
0.170
0.190
0.045
0.055
0.014
0.022
0.090
0.110
Dimensions TO-220AB
G
A
K
A
K
G
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180° conduction angle)
Tc = 110°C
8
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 110°C
5
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
100
A
tp = 10 ms
95
I
²t
I
²t Value for fusing
tp = 10 ms
Tj = 25°C
45
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr £ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV)
Average gate power dissipation
Tj = 125°C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage (for TN8 & TYN only)
5
V
Dimensions TO-263(D
2PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
8.00
8.89
.315
.350
E
9.65
10.29
.380
.405
E1
6.22
8.13
.245
.320
e
2.54 BSC
.100 BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.20
0
.008
R
0.46
0.74
.018
.029
K
A
G


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