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STY80NM60N Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STY80NM60N Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 9 page Electrical characteristics STY80NM60N 4/9 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 40A RG = 4.7 Ω VGS = 10 V (see Figure 2) Tbd Tbd Tbd Tbd ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 80 320 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25 °C (see Figure 4) Tbd Tbd Tbd ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) Tbd Tbd Tbd ns µC A |
Podobny numer części - STY80NM60N |
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Podobny opis - STY80NM60N |
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