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ST13003 Datasheet(Arkusz danych) 2 Page - STMicroelectronics

Numer części ST13003
Szczegółowy opis  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Pobierz  7 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
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 2 page
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
89
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICEV
Collect or Cut-off
Current (VBE = -1.5V)
VCE =700V
VCE =700V
Tj =125
oC
1
5
mA
mA
BVEBO
Emitt er-Base
Breakdown Volt age
(IC =0)
IE =10 mA
9
18
V
VCEO(sus )
∗ Collector-Emitter
Sustaining Voltage
(IB =0)
IC =10 mA
L = 25mH
400
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =0.5 A
IB =0.1 A
IC =1 A
IB =0.25 A
IC =1.5 A
IB =0.5 A
0.5
1
3
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =0. 5 A
IB =0.1 A
IC =1 A
IB =0.25 A
1.0
1.2
V
V
hFE
DC Current G ain
IC =0.5 A
VCE =2 V
Group A
Group B
IC =1 A
VCE =2 V
8
15
5
20
35
25
tr
ts
tf
RESI STIVE LO AD
Rise Time
St orage Time
Fall T ime
IC =1 A
VCC = 125 V
IB1 =0.2 A
IB2 =-0.2 A
Tp=25
µs
1.0
4.0
0.7
µs
µs
µs
ts
INDUCTIVE LOAD
St orage Time
IC =1 A
IB1 =0.2 A
VBE =-5 V
L = 50 mH
Vcla mp = 300 V
0.8
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
ST13003
2/7




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