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TYN640 Arkusz danych(PDF) 2 Page - STMicroelectronics |
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TYN640 Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 6 page TYNx40 Series 2/6 Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Table 5: Thermal resistance Symbol Test Conditions Value Unit IGT VD = 12 V RL = 33 Ω MIN. 3.5 mA MAX. 35 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 75 mA IL IG = 1.2 x IGT MAX. 150 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 80 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 10 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µA Tj = 125°C 4mA Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 0.8 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and D.C. on-state current versus case temperature 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 P(W) I (A) T(AV) α = 180° 360° α 0 25 50 75 100 125 0 10 20 30 40 50 I (A) T(AV) T (°C) case α = 180° D.C. |
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