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STP6NC60 Arkusz danych(PDF) 1 Page - STMicroelectronics

Numer części STP6NC60
Szczegółowy opis  N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6NC60 Arkusz danych(HTML) 1 Page - STMicroelectronics

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May 2001
STP6NC60 - STP6NC60FP
STB6NC60-1
N-CHANNEL 600V - 1
Ω - 6A TO-220/TO-220FP/I2PAK
PowerMESH™II MOSFET
s
TYPICAL RDS(on) = 1.0 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
TYPE
VDSS
RDS(on)
ID
STP(B)6NC60(-1)
600 V
< 1.2
6 A
STP6NC60FP
600 V
< 1.2
6 A
Symbol
Parameter
Value
Unit
STP(B)6NC60(-1)
STP6NC60FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
6
6(*)
A
ID
Drain Current (continuos) at TC = 100°C
3.8
3.8(*)
A
IDM (q)
Drain Current (pulsed)
24
24(*)
A
PTOT
Total Dissipation at TC = 25°C
125
40
W
Derating Factor
1.0
0.32
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
INTERNAL SCHEMATIC DIAGRAM
TO-220
TO-220FP
1
2
3
I2PAK
1
2
3


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