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2SK1298 Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SK1298 Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1298 Rev.2.00 Sep 07, 2005 page 4 of 6 80 Case Temperature TC (°C) 120 40 0 0.01 0.02 0.03 0.04 0.05 –40 0 160 Static Drain to Source on State Resistance vs. Temperature ID = 50 A Pulse Test VGS = 4 V VGS = 10 V 10 A, 20 A 10 A, 20 A 50 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1.0 0.5 1.0 2 5 10 50 Drain Current ID (A) 20 TC = 25°C VDS = 10 V Pulse Test –25 °C 75 °C 500 200 100 50 20 10 5 0.5 1.0 5 50 Reverse Drain Current IDR (A) 10 2 20 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25 °C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 10000 1000 100 10 010 20 50 Drain to Source Voltage VDS (V) 30 40 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 040 120 160 Gate Charge Qg (nc) 80 20 16 12 8 4 Dynamic Input Characteristics 200 0 VDS VGS VDD = 10 V 25 V ID = 40 A 50 V VDD = 10 V 25 V 50 V Switching Characteristics 1000 500 200 100 20 10 0.5 1.0 5 50 Drain Current ID (A) 10 2 20 50 td(off) tf VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 % td(on) tr • • |
Podobny numer części - 2SK1298 |
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Podobny opis - 2SK1298 |
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