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2SK1301 Arkusz danych(PDF) 4 Page - Renesas Technology Corp |
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2SK1301 Arkusz danych(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1301 Rev.2.00 Sep 07, 2005 page 4 of 6 80 Case Temperature TC (°C) 120 40 0 0.1 0.2 0.3 0.4 0.5 –40 0 160 Static Drain to Source on State Resistance vs. Temperature ID = 20 A Pulse Test VGS = 4 V VGS = 10 V 20 A 10 A 5 A 10 A 5 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.2 0.5 1.0 2 5 20 Drain Current ID (A) 10 0.5 TC = 25°C VDS = 10 V Pulse Test –25 °C 75 °C 500 100 50 20 10 5 0.2 0.5 2 20 Reverse Drain Current IDR (A) 5 1.0 10 Body to Drain Diode Reverse Recovery Time 200 di/dt = 50 A/ µs, Ta = 25 °C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 10000 1000 100 10 010 20 50 Drain to Source Voltage VDS (V) 30 40 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 0 20 60 80 Gate Charge Qg (nc) 40 20 16 12 8 4 Dynamic Input Characteristics 100 0 VDS VGS VDD = 25 V 50 V 80 V ID = 15 A VDD = 80 V 50 V 25 V Switching Characteristics 500 200 100 50 10 5 0.2 0.5 2 20 Drain Current ID (A) 5 1 10 20 td(off) td(on) tf tr VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 % • • |
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