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2SK1402 Arkusz danych(PDF) 4 Page - Renesas Technology Corp

Numer części 2SK1402
Szczegółowy opis  Silicon N Channel MOS FET
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1402 Arkusz danych(HTML) 4 Page - Renesas Technology Corp

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2SK1402, 2SK1402A
Rev.2.00 Sep 07, 2005 page 4 of 6
10
40
160
Case Temperature TC (°C)
8
2
0
80
120
0
4
6
Static Drain to Source on State
Resistance vs. Temperature
–40
VGS = 10 V
Pulse Test
ID = 5 A
2 A
1 A
10
0.1
2
Drain Current ID (A)
2
0.2
0.2
1
1
0.5
0.05
0.5
Forward Transfer Admittance
vs. Drain Current
5
VDS = 20 V
Pulse Test
75
°C
TC = –25°C
5
25
°C
0.1
1,000
0.1
2
Reverse Drain Current IDR (A)
500
20
0.2
1
0.05
100
200
10
0.5
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
µs, V
GS = 0
Ta = 25
°C
50
5
100
20
50
Drain to Source Voltage VDS (V)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
1,000
0
1,000
16
40
Dynamic Input Characteristics
800
200
824
32
0
400
600
20
16
4
0
8
12
0
250 V
400 V
VDD = 100 V
VGS
VDS
VDD = 400 V
250 V
100 V
ID = 4 A
Gate Charge Qg (nc)
500
Reverse Drain Current ID (A)
200
5
50
100
0.1
10
Switching Characteristics
td (off)
0.5
1
0.2
2
10
tf
tr
td (on)
20
VGS = 10 V, PW = 2 µs
duty
1%, VDD 30 V
5
<
=
=
.
.


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