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STP25NM60N Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STP25NM60N
Szczegółowy opis  N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP25NM60N Arkusz danych(HTML) 5 Page - STMicroelectronics

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STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 10 A
RG =4.7 Ω VGS = 10 V
(see Figure 18)
24.5
18
94
24
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
21
84
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 21 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 23)
427
7.2
33.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 23)
526
9.1
34.5
ns
µC
A


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