STP180N10F3 datasheet(3/12 Pages) STMICROELECTRONICS

Numer części	STP180N10F3

Szczegółowy opis	N-channel 100 V, 4.0 m廓, 120 A STripFET??Power MOSFET D2PAK, TO-220

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Producent	STMICROELECTRONICS [STMicroelectronics]

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STB180N10F3 - STP180N10F3

Electrical ratings

3/12

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS=0)

100

V

VGS

Gate-source voltage

± 20

V

ID

(1)

1.

Current limited by package.

Drain current (continuous) at TC = 25°C

120

A

ID

(1)

Drain current (continuous) at TC=100°C

120

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

480

A

PTOT

Total dissipation at TC = 25°C

315

W

Derating factor

2.1

W/°C

dv/dt

Peak diode recovery voltage slope

TBD

V/ns

EAS

(3)

3.

Starting Tj=25°C, Id=60 A, Vdd=40 V

Single pulse avalanche energy

TBD

mJ

Tj

Tstg

Operating junction temperature

storage temperature

-55 To 175

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220

D²PAK

Unit

Rthj-case

Thermal resistance junction-case

0.48

°C/W

Rthj-a

Thermal resistance junction-ambient

max

62.5

--

°C/W

Rthj-pcb(1)

1.

When mounted on FR-4 board, on 1inch², 2oz Cu.

Thermal resistance junction-ambient

max

--

35

°C/W

Tl

Maximum lead temperature for

soldering purpose

300

--

°C

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