STX112-AP datasheet(3/5 Pages) STMICROELECTRONICS

Numer części	STX112-AP

Szczegółowy opis	SILICON NPN POWER DARLINGTON TRANSISTOR

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3 / 5 page

STX112, STX117

Electrical characteristics

Doc ID 6881 Rev 4

3/9

2

Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Note:

For PNP types voltage and current values are negative.

2.1

Typical characteristic (curves)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 100 V

-

1

mA

ICEO

Collector cut-off current

(IB = 0)

VCE = 50 V

-

2

mA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

-

2

mA

VCEO(sus)

(1)

1.

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

sustaining voltage (IB = 0)

IC = 30 mA

100

-

V

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 2 A

IB = 8 mA

-

2.5

V

VBE(on)

Base-emitter on voltage

IC = 2 A

VCE = 4 V

-

2.8

V

hFE

(1)

DC current gain

IC = 1 A_ _

VCE = 4 V

1000

-

IC = 2 A_

VCE = 4 V

500

-

Figure 2.

DC current gain

(VCE = 3 V NPN)

Figure 3.

DC current gain

(VCE = - 3 V PNP)

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