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STY140NS10 Arkusz danych(PDF) 1 Page - STMicroelectronics

Numer części STY140NS10
Szczegółowy opis  N-CHANNEL 100V - 0.009 ohm - 140A MAX247??MESH OVERLAY??POWER MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY140NS10 Arkusz danych(HTML) 1 Page - STMicroelectronics

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August 2001
.
STY140NS10
N-CHANNEL 100V - 0.009
Ω - 140A MAX247™
MESH OVERLAY™ POWER MOSFET
s
TYPICAL RDS(on) = 0.009Ω
s
STANDARD THRESHOLD DRIVE
s
100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced
family
of
power
MOSFETs
with
outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termination
structure,
gives
the
lowest
RDS(on)
per
area,
exceptional
avalanche
and
dv/dt
capabilities
and
unrivalled gate charge and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SWITCH MODE POWER SUPPLY (SMPS)
TYPE
VDSS
RDS(on)
ID
STY140NS10
100V
<0.011
140A
1
2
3
Max247
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
(1) Starting Tj = 25 oC, ID = 70A, VDD= 50V
(2) ISD ≤140A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
140
A
ID
Drain Current (continuos) at TC = 100°C
99
A
IDM(•)
Drain Current (pulsed)
560
A
Ptot
Total Dissipation at TC = 25°C
450
W
Derating Factor
3
W/°C
EAS(1)
Single Pulse Avalanche Energy
2900
mJ
dv/dt (2)
Peak Diode Recovery voltage slope
5
V/ns
Tstg
Storage Temperature
-55 to 175
°C
Tj
Operating Junction Temperature
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM


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