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TDA1675 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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TDA1675 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 11 page DC ELECTRICAL CHARACTERISTICS (VS = 35V, Tamb = 25 oC, unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit Fig. I2 Pin 2 quiescent current I1 = 0 16 36 mA 1b - I9 Ramp generator bias current V9 = 0 0.02 1 µA1b - I9 Ramp generator current V9 = 0 ; - I7 = 20 µA 18.5 20 21.5 µA1b ∆I 9 I 9 Ramp generator non linearity ∆V9 = 0 to 15V, - I7 = 20µA 0.2 1 % 1b I14 Pin 14 quiescent current 25 45 mA 1b V1 Quiescent output voltage VS = 35V, Ra = 2.2k Ω, Rb = 1kΩ VS = 15V, Ra = 390 Ω, Rb = 1kΩ 16.4 6.9 17.8 7.5 19.5 8.1 V V 1a V1L Output saturation voltage to ground I1 = 1.2A, 1 1.4 V 1c V1H Output saturation voltage to supply - I1 = 1.2A 1.6 2.2 V 1d V4 Oscillator virtual ground 0.45 V 1b V7 Regulated voltage at pin 7 - I7 = 20 µA 6.3 6.6 7 V 1b ∆V 7 ∆VS Regulated voltage drift with supply voltage ∆VS = 15 to 35V 1 2 mV V 1b V11 Amplifier input (+) reference voltage 4.1 4.4 4.7 V 1b V13 Blanking output saturation voltage I13 = 10 mA 0.35 0.5 V 1a V15 Pin 15 saturation voltage to ground I15 = 20 mA 1 1.5 V 1a Figure 1 : DC Test Circuit. 12 1 2 9 7 8 10 VS I 14 V11 -I 7 V -I 9 5 3 75k Ω I1 11 I 2 + I 1 9 4 B 1V V4 A 4 V7 14 Figure 1b 1 2 11 8 4 1V 12 5 8V 0.1µF 10 VS V1L +I 1 14 Figure 1c 1 2 11 8 4 1V 14 12 5 8V 0.1µF 10 VS V1H -I1 Figure 1d R a 7 12 13 14 15 1 2 4 5 9 11 8 10 0.1µF I13 VS I15 V15 V13 V1 R b -I 9 1V 8V Figure 1a TDA1675A 3/11 |
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