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STD85N3LH5 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STD85N3LH5 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Electrical characteristics 5/16 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V (see Figure 15) 6 14 ns ns td(off) tf Turn-off delay time Fall time VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V (see Figure 15) 23.6 10.8 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 80 320 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 40 A, VGS = 0 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V (see Figure 17) 31.8 26.1 1.6 ns nC A |
Podobny numer części - STD85N3LH5 |
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Podobny opis - STD85N3LH5 |
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