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SI1032X-T1-GE3 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI1032X-T1-GE3 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 71172 S-81543-Rev. E, 07-Jul-08 www.vishay.com 3 Vishay Siliconix Si1032R/X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Surge-Drain Diode Forward Voltage 0 10 20 30 40 50 0 50 100 150 200 250 ID - Drain Current (mA) VGS = 1.8 V VGS = 4.5 V VGS = 2.5 V 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 Qg - Total Gate Charge (nC) VDS = 10 V ID = 150 mA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 1 VSD ) V ( e g a t l o V n i a r D - o t - e c r u o - S TJ = 125 °C TJ = 25 °C TJ = 50 °C 10 100 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 20 40 60 80 100 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VGS = 0 V f = 1 MHz 0.60 0.80 1.00 1.20 1.40 1.60 - 50 - 25 0 25 50 75 100 125 VGS = 4.5 V ID = 200 mA TJ - Junction Temperature (°C) VGS = 1.8 V ID = 175 mA 0 10 20 30 40 50 0 123 456 ID = 175 mA VGS - Gate-to-Source Voltage (V) ID = 200 mA |
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