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SI1054X-T1-GE3 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI1054X-T1-GE3 Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Vishay Siliconix Si1054X New Product Document Number: 69579 S-80641-Rev. B, 24-Mar-08 www.vishay.com 1 N-Channel 12-V (D-S) MOSFET FEATURES • Halogen-free Option Available •TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch for Portable Devices PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 12 0.095 at VGS = 4.5 V 1.32 5.25 0.104 at VGS = 2.5 V 1.26 0.114 at VGS = 1.8 V 0.88 Notes: a. Based on TA = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID 1.32b, c A TA = 70 °C 1.05b, c Pulsed Drain Current IDM 6 Continuous Source-Drain Diode Current TA = 25 °C IS 0.2b, c Maximum Power Dissipationa TA = 25 °C PD 0.236b, c W TA = 70 °C 0.151b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 440 530 °C/W Steady State 540 650 Ordering Information: Si1054X-T1-E3 (Lead (Pb)-free) Si1054X-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code R XX Lot Traceability and Date Code Part # Code SC-89 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S N-Channel MOSFET G D S RoHS COMPLIANT |
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