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SI1058X Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części SI1058X
Szczegółowy opis  N-Channel 20-V (D-S) MOSFET
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Document Number: 73894
S-81528-Rev. C, 30-Jun-08
Vishay Siliconix
Si1058X
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
18.9
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
- 3.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.7
1.55
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1nA
VDS = 20 V, VGS = 0 V, TJ = 85 °C
10
µA
On-State Drain Currenta
ID(on)
VDS = ≥ 5 V, VGS = 4.5 V
6
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 1.3 A
0.076
0.091
Ω
VGS = 2.5 V, ID = 1.1 A
0.103
0.124
Forward Transconductance
gfs
VDS = 10 V, ID = 1.3 A
5.5
S
Dynamicb
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
380
pF
Output Capacitance
Coss
75
Reverse Transfer Capacitance
Crss
45
Total Gate Charge
Qg
VDS = 10 V, VGS = 5 V, ID = 1.3 A
3.9
5.9
nC
VDS = 10 V, VGS = 4.5 V, ID = 1.3 A
3.51
5.3
Gate-Source Charge
Qgs
0.82
Gate-Drain Charge
Qgd
0.61
Gate Resistance
Rg
f = 1 MHz
4.3
5.6
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω
812
ns
Rise Time
tr
20
30
Turn-Off DelayTime
td(off)
13
18
Fall Time
tf
69
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
6
Body Diode Voltage
VSD
IS = 1.0 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 1.0 A, dI/dt = 100 A/µs
10.4
16
nC
Body Diode Reverse Recovery Charge
Qrr
3.7
5.7
ns
Reverse Recovery Fall Time
ta
6.5
Reverse Recovery Rise Time
tb
3.9


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