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SI1058X Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI1058X Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 73894 S-81528-Rev. C, 30-Jun-08 Vishay Siliconix Si1058X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 18.9 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 3.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.7 1.55 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1nA VDS = 20 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 4.5 V 6 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1.3 A 0.076 0.091 Ω VGS = 2.5 V, ID = 1.1 A 0.103 0.124 Forward Transconductance gfs VDS = 10 V, ID = 1.3 A 5.5 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 380 pF Output Capacitance Coss 75 Reverse Transfer Capacitance Crss 45 Total Gate Charge Qg VDS = 10 V, VGS = 5 V, ID = 1.3 A 3.9 5.9 nC VDS = 10 V, VGS = 4.5 V, ID = 1.3 A 3.51 5.3 Gate-Source Charge Qgs 0.82 Gate-Drain Charge Qgd 0.61 Gate Resistance Rg f = 1 MHz 4.3 5.6 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 15 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω 812 ns Rise Time tr 20 30 Turn-Off DelayTime td(off) 13 18 Fall Time tf 69 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 6 Body Diode Voltage VSD IS = 1.0 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.0 A, dI/dt = 100 A/µs 10.4 16 nC Body Diode Reverse Recovery Charge Qrr 3.7 5.7 ns Reverse Recovery Fall Time ta 6.5 Reverse Recovery Rise Time tb 3.9 |
Podobny numer części - SI1058X |
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Podobny opis - SI1058X |
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