SI1304BDL-T1-E3 datasheet(1/7 Pages) VISHAY

Numer części	SI1304BDL-T1-E3

Szczegółowy opis	N-Channel 30-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D 100% Rg Tested

RoHS

COMPLIANT

Si1304BDL

Vishay Siliconix

New Product

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)a

Qg (Typ)

30

0.270 @ VGS = 4.5 V

0.90

11

30

0.385 @ VGS = 2.5 V

0.75

1.1

Ordering Information: Si1304BDL–T1–E3

SC-70 (3-LEADS)

1

2

3

Top View

G

S

D

Marking Code

KF

XX

Lot Traceability

and Date Code

Part # Code

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"12

V

TC = 25_C

0.90

Continuous Drain Current (T

150

_C)

TC = 70_C

I

0.71

Continuous Drain Current (TJ = 150_C)

TA = 25_C

ID

0.85b, c

TA = 70_C

0.68b, c

A

Pulsed Drain Current

IDM

4

Continuous Source Drain Diode Current

TC = 25_C

I

0.31

Continuous Source-Drain Diode Current

TA = 25_C

IS

0.28b, c

TC = 25_C

0.37

Maximum Power Dissipation

TC = 70_C

P

0.24

W

Maximum Power Dissipation

TA = 25_C

PD

0.34b, c

W

TA = 70_C

0.22b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

p 5 sec

RthJA

315

375

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

285

340

_C/W

Notes:

a.

Based on TC = 25_C.

b.

Surface mounted on 1” x 1” FR4 board.

c.

t = 5 sec

d.

Maximum under steady state conditions is 360

_C/W.

Podobny numer części - SI1304BDL-T1-E3

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