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SI1304BDL-T1-E3 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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1 / 7 page FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT Si1304BDL Vishay Siliconix New Product Document Number: 73480 S–52057—Rev. B, 03–Oct–05 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)a Qg (Typ) 30 0.270 @ VGS = 4.5 V 0.90 11 30 0.385 @ VGS = 2.5 V 0.75 1.1 Ordering Information: Si1304BDL–T1–E3 SC-70 (3-LEADS) 1 2 3 Top View G S D Marking Code KF XX Lot Traceability and Date Code Part # Code N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "12 V TC = 25_C 0.90 Continuous Drain Current (T 150 _C) TC = 70_C I 0.71 Continuous Drain Current (TJ = 150_C) TA = 25_C ID 0.85b, c TA = 70_C 0.68b, c A Pulsed Drain Current IDM 4 Continuous Source Drain Diode Current TC = 25_C I 0.31 Continuous Source-Drain Diode Current TA = 25_C IS 0.28b, c TC = 25_C 0.37 Maximum Power Dissipation TC = 70_C P 0.24 W Maximum Power Dissipation TA = 25_C PD 0.34b, c W TA = 70_C 0.22b, c Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t p 5 sec RthJA 315 375 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340 _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 5 sec d. Maximum under steady state conditions is 360 _C/W. |
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