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SI1411DH Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI1411DH Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si1411DH Vishay Siliconix New Product www.vishay.com 2 Document Number: 73242 S-50461—Rev. B, 14-Mar-05 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −100 mA −2.5 −4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −150 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −150 V, VGS = 0 V, TJ = 85_C −5 mA On-State Drain Currenta ID(on) VDS = −15 V, VGS = −10 V −0.8 A Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −0.5 A 2.05 2.6 W Drain-Source On-State Resistancea rDS(on) VGS = −6 V, ID = −0.5 A 2.14 2.7 W Forward Transconductancea gfs VDS = −10 V, ID = −0.5 A 1.5 S Diode Forward Voltagea VSD IS = −1.4 A, VGS = 0 V −0.80 −1.1 V Dynamicb Total Gate Charge Qg 4.2 6.3 Gate-Source Charge Qgs VDS = −75 V, VGS = −10 V, ID = −0.5 A 0.9 nC Gate-Drain Charge Qgd DS , GS , D 1.3 Gate Resistance Rg f = 1.0 MHz 8.5 W Turn-On Delay Time td(on) 4.5 7 Rise Time tr VDD = −75 V, RL = 75 W 11 17 Turn-Off Delay Time td(off) VDD = −75 V, RL = 75 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 9 14 ns Fall Time tf g 11 17 ns Reverse Recovery Time trr IF = 0 5 A di/dt = 100 A/ms 36 55 Body Diode Reverse Recovery Charge Qrr IF = −0.5 A, di/dt = 100 A/ms 65 100 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1234 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2468 10 VGS = 10 thru 5 V 25_C TC = 125_C −55_C 3 V Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 4 V |
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