SI1450DH-T1-E3 datasheet(3/7 Pages) VISHAY

Numer części	SI1450DH-T1-E3

Szczegółowy opis	N-Channel 8-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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3 / 7 page

Document Number: 74275

S-62079-Rev. A, 23-Oct-06

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Vishay Siliconix

Si1450DH

TYPICAL CHARACTERISTICS

25 °C, unless noted

Output Characteristics

rDS(on) vs. Drain Current

Gate Charge

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

VDS – Drain-to-Source Voltage (V)

V

= 5 thru 2 V

GS

V

= 1.5 V

GS

V

= 1 V

GS

0.00

0.02

0.04

0.06

0.08

0.10

0

3

6

9

12

15

VGS = 1.5 V

ID – Drain Current (A)

VGS = 4.5 V

VGS = 1.5 V

VGS = 2.5 V

0

1

2

3

4

5

Qg – Total Gate Charge (nC)

5

3

2

0

6

ID = 4.4 A

VDS = 4 V

VGS = 6.4 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

0.0

0.5

1.0

1.5

2.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS – Gate-to-Source Voltage (V)

Crss

0

200

400

600

800

0246

8

Coss

Ciss

VDS – Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

TJ – Junction Temperature (°C)

VGS = 4.5 V

ID = 4.6 A

VGS = 2.5 V, ID = 4.4 A

VGS = 1.5 V

ID = 1.2 A

VGS = 1.8 V, ID = 4.25 A

Podobny numer części - SI1450DH-T1-E3

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