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SI1563EDH-T1-E3 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI1563EDH-T1-E3 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 71416 S-80257-Rev. C, 04-Feb-08 www.vishay.com 3 Vishay Siliconix Si1563EDH New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate-Current vs. Gate-Source Voltage Output Characteristics On-Resistance vs. Drain Current 0 2 4 6 8 10 04 8 12 16 VGS - Gate-to-Source Voltage (V) 0.0 0.5 1.0 1.5 2.0 01234 VGS = 5 thru 2 V 1.5 V VDS - Drain-to-Source Voltage (V) 1 V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 VGS = 4.5 V VGS = 2.5 V ID - Drain Current (A) VGS = 1.8 V Gate-Current vs. Gate-Source Voltage Transfer Characteristics Capacitance 0.001 100 10000 0.1 1 10 1000 VGS - Gate-to-Source Voltage (V) 0 39 12 15 TJ = 25 °C TJ = 150 °C 0.01 6 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 25 °C TC = - 55 °C 125 °C VGS - Gate-to-Source Voltage (V) 0 20 40 60 80 100 120 140 04 8 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) |
Podobny numer części - SI1563EDH-T1-E3 |
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Podobny opis - SI1563EDH-T1-E3 |
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