SI1902DL-T1-E3 datasheet(1/6 Pages) VISHAY

Numer części	SI1902DL-T1-E3

Szczegółowy opis	Dual N-Channel 20-V (D-S) MOSFET

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Vishay Siliconix

Si1902DL

Document Number: 71080

S-51415–Rev. H, 03-Apr-06

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1

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFETS: 2.5 V Rated

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)ID (A)

20

0.385 at VGS = 4.5 V

0.70

0.630 at VGS = 2.5 V

0.54

M a r k ing C od e

P A X

XX

Lo t T

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

S1

G1

D2

D1

G2

S2

Part # Code

Marking Code

PA

Lot Traceability

and Date Code

Ordering Information: Si1902DL-T1 (with Tape and Reel)

Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)

Notes

a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

0.70

0.66

A

TA = 85 °C

0.50

0.48

Pulsed Drain Current

IDM

1.0

Continuous Source Current (Diode Conduction)a

IS

0.25

0.23

Maximum Power Dissipationa

TA = 25 °C

PD

0.30

0.27

W

TA = 85 °C

0.16

0.14

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 sec

RthJA

360

415

°C/W

Steady State

400

460

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

300

350

Available

Pb-free

RoHS*

COMPLIANT

Podobny numer części - SI1902DL-T1-E3

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Vishay Siliconix	SI1902DL-T1-GE3	237Kb / 9P	Dual N-Channel 20 V (D-S) MOSFET Rev. J, 17-Oct-11

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